microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright 2001 rev. 0.3 www. microsemi . com MXP7A01 ? 1x4 array (10gbps) gaas pin photo diode o pto -e lectronic p roducts e ngineering s pecification description description description description microsemi?s gaas pin photo diode chips are ideal for high bandwidth 850nm optical networking applications. the device series offers superior noise performance and sensitivity due to their construction and passivation. every wafer of each lot is extensively tested for responsivity and capacitance. dark current is tested on 100% of the devices. reliability is demonstrated by high temperature reverse bias testing on each wafer. the mxp7000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations. this device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. ke ke ke key features y features y features y features high responsivity low dark current high bandwidth anode/cathode on illuminated side applications applications applications applications short reach optical networks 10gigabit ethernet, fibre channel benefits benefits benefits benefits large wirebond contact pad low contact resistance low crosstalk between photo diodes product highlight product highlight product highlight product highlight characteristics characteristics characteristics characteristics test conditions (unless otherwise noted): t a = 25 o c, v r = 5 volts MXP7A01 parameter symbol test conditions min typ max units maximum ratings operating temperature range t op -40 +100 o c storage temperature range t stg -60 +125 o c maximum soldering temperature 10 seconds maximum at temperature +260 o c electrical characteristics (each photo diode) active area diameter 75 m responsivity r v r = 5v, = 850nm 0.45 a/w dark current i d v r = 5v 0.05 na breakdown voltage bv r i r = 1a 25 volts capacitance c v r = 5v 0.2 pf bandwidth bw v r = 5v, = 850nm 10 ghz m m x x p p 7 7 a a 0 0 1 1 important: for the most current data, consult microsemi ?s website: http://www.microsemi.com +/- 2um microsemi MXP7A01 1168.4um 406.4um +/- 25um +/- 25um 250um center to center 75um sq +/- 2um 183um 50um +/- 2um 50um ? 75um active area 1168.4um +/- 25um 100um anode anode anode anode
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright 2001 rev. 0.3 www. microsemi . com MXP7A01 ? 1x4 array (10gbps) gaas pin photo diode o pto -e lectronic p roducts e ngineering s pecification equivalent photodiode circuit model r diode > 5 mohm is negligible c shunt = 40.6 ff, r ser = 10.6 ohm, and l ser = 411 ph (typical for test setup rf submount package) c diode = 178.4, 177.0, and 175.7 ff for v bias = 0, -5, and -10 v. precautions for use precautions for use precautions for use precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling gaas pin photo diode. r diode c diode c shunt r ser l ser
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